| 摘要 |
<p>A vertical memory device comprises a plurality of channel columns, a charge storage film structure, and a plurality of gate electrodes. Each of the channel columns includes a plurality of channels which is extended on a substrate along a first direction perpendicular to an upper surface of the substrate and is arranged along a third direction parallel with the upper surface of the substrate. The charge storage film structure includes a tunnel insulation film pattern, a charge storage film pattern, and a blocking film pattern, which encloses the charge storage film patterns formed on sidewalls of the channels included in the respective channel columns, which are sequentially stacked on the sidewalls of the respective channels. The gate electrodes are arranged to be apart from each other in the first direction on the sidewall of the respective charge storage film structure. Each of the charge storage film patterns can include two charge storage positions which are apart from each other in the second direction around each channel.</p> |
