发明名称
摘要 <p>A method and apparatus for retaining a substrate, such as a semiconductor wafer, upon an electrostatic chuck within a semiconductor wafer processing system. Specifically, the invention contains high voltage, DC power supply that is capable of both sourcing and sinking current at any polarity of output voltage level. This power supply is coupled to at least one electrode of an electrostatic chuck. Consequently, the power supply can be used to dynamically control the chucking voltage in response to any indicia of optimal chucking including leakage current, wafer-to-chuck potential, backside gas leakage rate, and the like.</p>
申请公布号 JP5583633(B2) 申请公布日期 2014.09.03
申请号 JP20110109948 申请日期 2011.05.16
申请人 发明人
分类号 H01L21/302;H01L21/683;B23Q3/15;H01L21/3065;H01L21/31;H02N13/00 主分类号 H01L21/302
代理机构 代理人
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