Group 13 nitride crystal, group 13 nitride crystal substrate, and method of manufacturing group 13 nitride crystal

摘要

A group 13 nitride crystal (19) having a hexagonal crystal structure contains at least a nitrogen atom and at least one metal atom selected from a group consisting of B, Al, Ga, In and Tl. Dislocation density of basal plane dislocations (P) in a cross section parallel to a c-axis is 10 4 cm -2 or more.