发明名称 |
PHOTO ABSORBING LAYER FOR PHOTOELECTRODE STRUCTURE, PHOTOELECTRODE STRUCTURE COMPRISING THE PHOTO ABSORBING LAYER FOR PHOTOELECTRODE STRUCTURE AND PHOTOELECTOCHEMICAL CELL INCLUDING THE SAME |
摘要 |
<p>Disclosed are a light absorption layer for a photoelectrode structure comprising copper oxide and including metallic copper existing on a grain boundary of the copper oxide, a photoelectrode structure comprising the same, a photoelectrochemical cell including the photoelctrode structure, and a solar cell comprising the light absorption layer.</p> |
申请公布号 |
KR20140106297(A) |
申请公布日期 |
2014.09.03 |
申请号 |
KR20130020669 |
申请日期 |
2013.02.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JEONG HEE;KIM, TAE GON;KIM, TAE HYUNG;IM, SEOUNG JAE |
分类号 |
H01L31/04;H01L31/0224 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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