发明名称 PHOTO ABSORBING LAYER FOR PHOTOELECTRODE STRUCTURE, PHOTOELECTRODE STRUCTURE COMPRISING THE PHOTO ABSORBING LAYER FOR PHOTOELECTRODE STRUCTURE AND PHOTOELECTOCHEMICAL CELL INCLUDING THE SAME
摘要 <p>Disclosed are a light absorption layer for a photoelectrode structure comprising copper oxide and including metallic copper existing on a grain boundary of the copper oxide, a photoelectrode structure comprising the same, a photoelectrochemical cell including the photoelctrode structure, and a solar cell comprising the light absorption layer.</p>
申请公布号 KR20140106297(A) 申请公布日期 2014.09.03
申请号 KR20130020669 申请日期 2013.02.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JEONG HEE;KIM, TAE GON;KIM, TAE HYUNG;IM, SEOUNG JAE
分类号 H01L31/04;H01L31/0224 主分类号 H01L31/04
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