| 摘要 |
A compound semiconductor device includes: a substrate; an electron transit layer and electron supply layer formed over the substrate; a gate electrode, source electrode, and drain electrode formed over the electron supply layer; and a first Fe-doped layer provided between the substrate and the electron transit layer in a region corresponding to the position of the gate electrode in plan view, the first Fe-doped layer being doped with Fe to reduce two dimensional electron gas generated below the gate electrode. |
