THIN FILM TRANSISTOR ON FIBER AND MANUFACTURING METHOD OF THE SAME

摘要

Disclosed is a thin film transistor formed on a fiber. The disclosed thin film transistor includes a first electrode, a second electrode, and a gate electrode which are formed on a fiber, and a channel which is formed between the first electrode and the second electrode. The thin film transistor can further include a sealing material which seals the fiber, the first electrode, the second electrode, the gate electrode, and the upper part of the channel; and a gate insulating layer partly formed in a region of the sealing material.