| 摘要 |
The present invention provides a method for manufacturing a semiconductor device to form a thin film which has properties of low permittivity, high etching tolerance, and high leakage tolerance, a substrate processing apparatus and a recording medium. A method for manufacturing a semiconductor device according to one embodiment of the present invention includes a step of forming a layer which includes preset element and carbon on the substrate by performing preset times a cycle which includes a step of supplying a first process gas which includes preset element and halogen element to a substrate, a step of supplying a second process gas which includes carbon and nitrogen to the substrate, a step of supplying a third process gas which includes carbon to the substrate, and a step of supplying a forth gas which is different from the first to third process gas to the substrate. |
