| 摘要 |
<p>The invention relates to a dielectric element comprising a lower electrode; a dielectric film provided on the lower electrode; and an upper electrode provided on the dielectric film, wherein the upper electrode is composed of one or more of Cu, Ni, Al, and Ag, the lower electrode is composed of one or more of Cu, Ni, Al, and Ag, the dielectric is composed of an oxide including one or more of Ba, Sr, Ca, Pb,Ti, Zr, and Hf, the dielectric has a dielectric constant of 900 or greater, and the leak current density of the dielectric element is equal to or less than 1 × 10 -6 A / cm 2 . The invention further relates to the use of said dielectric element as a thin film capacitor</p> |
