| 摘要 |
<p>In a semiconductor device including an insulating structure and a manufacturing method thereof, the semiconductor device has, in a substrate divided into a first region and a second region, a first pattern structure of a first height in the substrate of the first region. In the substrate of the second region, a second pattern structure of a second height which is higher than the first height is formed. On the substrate, included is an insulating structure which includes a protruding filler pattern which has an upper surface which is higher than the upper surface of the first pattern structure, has a shape which covers the first and the second pattern structure, and has at least one step-shaped sidewall on the boundary part of the first and second regions. The insulating structure has a structure for easy planarization due to polishing.</p> |
