发明名称 Passivated light emitting device
摘要 <p>Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure (101) comprising a first conductive type semiconductor layer (116), a second conductive type semiconductor layer (112), and an active layer (114) between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer (130) protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer (131) on a top surface of the light emitting structure and a second passivation layer (132) having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer. </p>
申请公布号 EP2355190(A3) 申请公布日期 2014.09.03
申请号 EP20110151633 申请日期 2011.01.21
申请人 LG INNOTEK CO., LTD. 发明人 KIM, SUN KYUNG
分类号 H01L33/44;H01L33/22 主分类号 H01L33/44
代理机构 代理人
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