Inter-word-line programming in arrays of analog memory cells

摘要

A method includes selecting a word line for programming in an array of analog memory cells that are arranged in rows associated with respective word lines and columns associated with respective bit lines. Word-line voltages, which program the memory cells in the selected word line, are applied to the respective word lines. Bit-line voltages, which cause one or more additional memory cells outside the selected word line to be programmed as a result of programming the selected word line, are applied to the respective bit lines. Using the applied word-line and bit-line voltages, data is stored in the memory cells in the selected word line and the additional memory cells are simultaneously programmed.

主权项

1. A method, comprising:
in an array of analog memory cells that are arranged in rows associated with respective word lines and columns associated with respective bit lines, selecting a word line for programming; applying to the word lines respective word-line voltages that program the memory cells in the selected word line; applying to the bit lines respective bit-line voltages that cause one or more additional memory cells outside the selected word line to be programmed as a result of programming the selected word line; and using the applied word-line and bit-line voltages, storing data in the memory cells in the selected word line and simultaneously programming the additional memory cells.