Multiple step programming in a memory device

摘要

A method for multiple step programming programs data to an even page of memory cells. The even page of memory cells is read into a page buffer and the uncertain data is removed. An odd page of memory cells is programmed and the data from the even page data from the page buffer is reprogrammed to the even page of memory cells without the uncertain data.

主权项

1. A method for multiple step programming in a memory device, the method comprising:
programming data to a page of memory cells wherein the programmed data corresponds to a plurality of threshold voltage distributions; reading data from the page of memory cells; and reprogramming the page of memory cells with the read data wherein data having a threshold voltage within threshold voltage ranges between the plurality of threshold voltage distributions is not reprogrammed.