发明名称 Current mirror with immunity for the variation of threshold voltage and the generation method thereof
摘要 A current mirror with immunity for the variation of threshold voltage includes raising the voltage difference between the gate and the source of a MOS in the current source, and increasing the channel length of the MOS for limiting the generated reference current.
申请公布号 US8823446(B2) 申请公布日期 2014.09.02
申请号 US200912471403 申请日期 2009.05.24
申请人 Etron Technology, Inc. 发明人 Shiah Chun;Yang Hao-Jan;Chen Ho-Yin;Lai Kuo-Chen
分类号 G05F1/10;G05F1/56;G05F3/26 主分类号 G05F1/10
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A current source, for driving a Metal Oxide Semiconductor (MOS) circuit to generate a predetermined current, the current source comprising: a feedback circuit, comprising: a second MOS transistor, comprising: a first end, coupled to a voltage source;a control end; anda second end, coupled to the control end of the second MOS transistor;a third MOS transistor, comprising: a first end, coupled to the voltage source;a control end, coupled to the control end of the second MOS transistor; anda second end;a fourth MOS transistor, comprising: a first end, coupled to the second end of the third MOS transistor, for outputting a feedback voltage;a control end, for receiving a control voltage; anda second end; anda fifth MOS transistor, comprising: a first end, coupled to the second end of the second MOS transistor;a control end, for outputting an output voltage, wherein the output voltage is equal to the control voltage; anda second end;a first resistor, coupled between the ground end and the control end of the fifth MOS transistor; andthe MOS circuit, comprising a plurality of MOS transistors connected in series; a first end of a sixth MOS transistor of the plurality of MOS transistors connected in series being coupled to the voltage source;a control end of each of the plurality of MOS transistors being directly coupled to the first end of the fourth MOS transistor, and controlled by the feedback voltage; anda second end of a seventh MOS transistor of the plurality of MOS transistors connected in series being coupled to the control end of the fifth MOS transistor;wherein the output voltage of the control end of the fifth MOS transistor is not influenced by series source/drain voltages of the plurality of MOS transistors, and a decrease of the feedback voltage is dependent on an equivalent channel length of the plurality of MOS transistors, not dependent on a process of the plurality of MOS transistors or a threshold voltage of the sixth MOS transistor.
地址 Hsinchu TW
您可能感兴趣的专利