发明名称 Method for heating part in processing chamber of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
摘要 There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.
申请公布号 US8824875(B2) 申请公布日期 2014.09.02
申请号 US201113034858 申请日期 2011.02.25
申请人 Tokyo Electron Limited 发明人 Yamawaku Jun;Koshimizu Chishio;Matsudo Tatsuo
分类号 A21B2/00;F26B19/00 主分类号 A21B2/00
代理机构 Pearne & Gordon LLP 代理人 Pearne & Gordon LLP
主权项 1. A method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate, the method comprising: generating first heating lights having a first wavelength band capable of being absorbed into a first part in the processing chamber, the first heating lights being generated by a first heating light source provided outside the processing chamber, generating second heating lights having a second wavelength band capable of passing through the first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, the second heating lights being generated by a second heating light source provided outside the processing chamber, and heating the first part in the processing chamber by irradiating the first heating lights to the first part in the processing chamber, and heating the second part in the processing chamber by passing the second heating lights through the first part in the processing chamber and irradiating the second heating lights to the second part in the processing chamber.
地址 Tokyo JP