发明名称 |
Systems and methods for forming a time-averaged line image |
摘要 |
Systems and methods for forming a time-averaged line image having a relatively high amount of intensity uniformity along its length is disclosed. The method includes forming at an image plane a line image having a first amount of intensity non-uniformity in a long-axis direction and forming a secondary image that at least partially overlaps the primary image. The method also includes scanning the secondary image over at least a portion of the primary image and in the long-axis direction according to a scan profile to form a time-average modified line image having a second amount of intensity non-uniformity in the long-axis direction that is less than the first amount. For laser annealing a semiconductor wafer, the amount of line-image overlap for adjacent scans of a wafer scan path is substantially reduced, thereby increasing wafer throughput. |
申请公布号 |
US8822353(B2) |
申请公布日期 |
2014.09.02 |
申请号 |
US201113199016 |
申请日期 |
2011.08.17 |
申请人 |
Ultratech, Inc. |
发明人 |
Anikitchev Serguei;McWhirter James T.;Gortych Joseph E. |
分类号 |
B23K26/00;H01L21/268;B23K26/073 |
主分类号 |
B23K26/00 |
代理机构 |
Opticus IP Law PLLC |
代理人 |
Opticus IP Law PLLC |
主权项 |
1. A method of forming a time-averaged modified line image at an image plane, comprising:
forming at the image plane a line image having a first amount of intensity non-uniformity in a long-axis direction; forming a secondary image that at least partially overlaps the primary image; and scanning the secondary image in the long axis direction over at least a portion of the primary image according to a scan profile to form the time-average modified line image having a second amount of intensity non-uniformity in the long-axis direction that is less than the first amount. |
地址 |
San Jose CA US |