| 发明名称 | Method of growing epitaxial layers on a substrate | ||
| 摘要 | An epitaxial growth method includes plasma treating a surface of a bulk crystalline Aluminum Nitride (AlN) substrate and subsequently heating the substrate in an ammonia-rich ambient to a temperature of above 1000° C. for at least 5 minutes without epitaxial growth. After heating the surface, a III-nitride layer is epitaxially grown on the surface. | ||
| 申请公布号 | US8822314(B2) | 申请公布日期 | 2014.09.02 |
| 申请号 | US201213523670 | 申请日期 | 2012.06.14 |
| 申请人 | Palo Alto Research Center Incorporated | 发明人 | Chua Christopher L.;Teepe Mark R.;Wunderer Thomas;Yang Zhihong;Johnson Noble M.;Knollenberg Clifford |
| 分类号 | H01L21/20;H01L21/322;H01L21/02 | 主分类号 | H01L21/20 |
| 代理机构 | Hollingsworth Davis, LLC | 代理人 | Hollingsworth Davis, LLC |
| 主权项 | 1. An epitaxial growth method, comprising: plasma treating a surface of a bulk crystalline Aluminum Nitride (AlN) substrate; after the plasma treating, removing organics and metals from the surface using one or more chemical etchants; after removing the organics and metals, heating the surface in an ammonia-rich ambient environment to a temperature of above 1000° C. for at least 5 minutes without epitaxial growth; and after heating the surface, epitaxially growing a III-nitride layer on the surface. | ||
| 地址 | Palo Alto CA US | ||