发明名称 |
Semiconductor resistor including a dielectric layer including a species creating fixed charges and method for the formation thereof |
摘要 |
A semiconductor structure includes a resistor. The resistor includes a semiconductor region, a dielectric layer, a first electrical connection and a second electrical connection. The dielectric layer is provided on the semiconductor region and includes a high-k material having a greater dielectric constant than silicon dioxide. The dielectric layer includes a species creating fixed charges. A first electrical connection is provided at a first end of the semiconductor region and a second electrical connection is provided at a second end of the semiconductor region. |
申请公布号 |
US8823138(B1) |
申请公布日期 |
2014.09.02 |
申请号 |
US201313937332 |
申请日期 |
2013.07.09 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Goldbach Matthias;Trentzsch Martin |
分类号 |
H01L29/00;H01L49/02 |
主分类号 |
H01L29/00 |
代理机构 |
Amerson Law Firm, PLLC |
代理人 |
Amerson Law Firm, PLLC |
主权项 |
1. A semiconductor structure comprising a resistor, the resistor comprising:
a semiconductor region; a dielectric layer provided over said semiconductor region, said dielectric layer comprising a high-k material having a greater dielectric constant than silicon dioxide, wherein said dielectric layer comprises a species creating fixed charges; a first electrical connection at a first end of said semiconductor region; and a second electrical connection at a second end of said semiconductor region. |
地址 |
Grand Cayman KY |