GaN vertical bipolar transistor

摘要

An embodiment of a semiconductor device includes a III-nitride base structure of a first conductivity type, and a III-nitride emitter structure of a second conductivity type having a first surface and a second surface. The second surface is substantially opposite the first surface. The first surface of the III-nitride emitter structure is coupled to a surface of the III-nitride base structure. The semiconductor also includes a first dielectric layer coupled to the second surface of the III-nitride emitter structure, and a spacer coupled to a sidewall of the III-nitride emitter structure and the surface of the III-nitride base structure. The semiconductor also includes a base contact structure with a III-nitride material coupled to the spacer, the surface of the III-nitride base structure, and the first dielectric layer, such that the first dielectric layer and the spacer are disposed between the base contact structure and the III-nitride emitter structure.

主权项

1. A method for fabricating a vertical bipolar transistor, the method comprising:
providing a III-nitride base structure of a first conductivity type; forming a III-nitride emitter structure of a second conductivity type having a first surface and a second surface, the second surface being substantially opposite the first surface, wherein:
the first surface of the III-nitride emitter structure is coupled to a surface of the III-nitride base structure;a first dielectric layer is coupled to the second surface of the III-nitride emitter structure; andthe III-nitride emitter structure has a sidewall adjacent to an exposed portion of the surface of the III-nitride base structure; forming a spacer coupled to the sidewall of the III-nitride emitter structure and the exposed portion of the surface of the III-nitride base structure; and forming a base contact structure comprising a III-nitride material coupled to the spacer, the exposed portion of the surface of the III-nitride base structure, and the first dielectric layer, such that the first dielectric layer and the spacer are disposed between the base contact structure and the III-nitride emitter structure.