Non-volatile memory device having stacked structure, and memory card and electronic system including the same

摘要

Provided are a non-volatile memory devices having a stacked structure, and a memory card and a system including the same. A non-volatile memory device may include a substrate. A stacked NAND cell array may have at least one NAND set and each NAND set may include a plurality of NAND strings vertically stacked on the substrate. At least one signal line may be arranged on the substrate so as to be commonly coupled with the at least one NAND set.

主权项

1. A non-volatile memory device having a stacked structure, the non-volatile memory device comprising:
at least one set of semiconductor layers; a plurality of control gate electrodes on at least one side surface of the at least one set of semiconductor layers, the plurality of control gate electrodes extending perpendicularly across the at least one set of semiconductor layers; at least one bit line commonly connected to the at least one set of semiconductor layers; and a plurality of word lines connected to the plurality of control gate electrodes, wherein,
the at least one bit line is under the at least one set of semiconductor layers, andthe plurality of word lines is between the at least one set of semiconductor layers and the at least one bit line.