发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes: a first semiconductor layer; a second semiconductor layer; a two-dimensional carrier gas layer; a source electrode; a drain electrode; a gate electrode; and an auxiliary electrode located above the two-dimensional carrier gas layer between the gate electrode and the drain electrode. Channel resistance of the two-dimensional carrier gas layer between the gate electrode and the auxiliary electrode is set higher than channel resistance of the two-dimensional carrier gas layer between the gate electrode and the source electrode. |
申请公布号 |
US8823061(B2) |
申请公布日期 |
2014.09.02 |
申请号 |
US201113210950 |
申请日期 |
2011.08.16 |
申请人 |
Sanken Electric Co., Ltd. |
发明人 |
Iwabuchi Akio;Aoki Hironori |
分类号 |
H01L29/66;H01L29/778;H01L29/423;H01L29/10;H01L29/20 |
主分类号 |
H01L29/66 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A semiconductor device, comprising:
a first semiconductor layer; a second semiconductor layer provided on the first semiconductor layer with a heterojunction interface interposed therebetween; a two-dimensional carrier gas layer provided near the heterojunction interface in the first semiconductor layer; a source electrode electrically connected to one end of the two-dimensional carrier gas layer; a drain electrode electrically connected to the other end of the two-dimensional carrier gas layer; a gate electrode provided above the two-dimensional carrier gas layer between the source electrode and the drain electrode; and an auxiliary electrode provided above the two-dimensional carrier gas layer between the gate electrode and the drain electrode; and a first recess in the semiconductor layer spanning from the surface of the second semiconductor layer toward the heterojunction interface between the gate electrode and the auxiliary electrode forming a channel resistance of the two-dimensional carrier gas layer between the gate electrode and the auxiliary electrode that is higher relative to a channel resistance of the two-dimensional carrier gas layer between the gate electrode and the source electrode. |
地址 |
Niiza-shi JP |