Light emitting diode with graphene layer

摘要

A light emitting diode includes a substrate, graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer is on the epitaxial growth layer of the substrate. The active layer is between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. The graphene layer is located on at least one of the first semiconductor layer and the second semiconductor layer.

主权项

1. A light emitting diode, comprising:
a substrate comprising an epitaxial growth surface; a semiconductor epitaxial layer on the epitaxial growth surface of the substrate, wherein the semiconductor epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer, the active layer is between the first and the second semiconductor layer, and the first semiconductor layer is on the epitaxial growth surface of the substrate; a first electrode electrically connected with the second semiconductor layer; a second electrode electrically connected with the first semiconductor layer; and a first graphene layer fully enclosed in the first semiconductor layer, wherein the first graphene layer is suspended above, and spaced from, the epitaxial growth surface.