| 发明名称 | Nitride semiconductor ultraviolet light-emitting device | ||
| 摘要 | A nitride semiconductor ultraviolet light-emitting device includes at least one first conductivity-type nitride semiconductor layer, a nitride semiconductor emission layer, at least one second conductivity-type nitride semiconductor layer and a transparent conductive film of crystallized Mgx1Zn1-x1O (0<x1<1) that can transmit 75% or more of light emitted from the emission layer, sequentially stacked in this order on a support substrate. | ||
| 申请公布号 | US8823033(B2) | 申请公布日期 | 2014.09.02 |
| 申请号 | US201213688335 | 申请日期 | 2012.11.29 |
| 申请人 | Sharp Kabushiki Kaisha | 发明人 | Yamamoto Shuichiro;Hirukawa Shuichi;Ohta Masataka |
| 分类号 | H01L33/00 | 主分类号 | H01L33/00 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A nitride semiconductor ultraviolet light-emitting device comprising: at least one first conductivity-type nitride semiconductor layer, a nitride semiconductor emission layer, at least one second conductivity-type nitride semiconductor layer and a transparent conductive film of crystallized Mgx1Zn1-x1O (0<x1<1) that can transmit 75% or more of light emitted from the emission layer, in this order on a support substrate, wherein the first conductivity-type is a p-type and the second conductivity-type is an n-type. | ||
| 地址 | Osaka JP | ||