Gate insulator loss free etch-stop oxide thin film transistor

摘要

A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

主权项

1. A thin film transistor (TFT), the TFT comprising:
a gate electrode disposed over a substrate; a gate insulator disposed over the gate electrode; a semiconductor layer disposed over the gate insulator so as to cover the gate insulator entirely, wherein the semiconductor layer is formed of indium-gallium-zinc-oxide; an insulator formed over the semiconductor layer; a source electrode having a first portion covering a first portion of the insulator; and a drain electrode having a first portion covering a second portion of the insulator, wherein the semiconductor layer is configured to extend outwardly from the insulator and to cover a region between the insulator and the gate insulator to prevent loss of the gate insulator during an etching of the insulator.