Nonvolatile memory device

摘要

A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.

主权项

1. A nonvolatile memory device with a memory cell, the memory cell comprising:
a resistance change layer, that switches between a high resistance state and a low resistance state by transfer of metal ions; a first electrode formed on a first side of the resistance change layer; a second electrode formed on a second side of the resistance change layer; and a high permittivity layer formed between the first electrode and the resistance change layer, the high permittivity layer having a higher dielectric constant than at least some portion of the resistance change layer, wherein the first electrode transfers metal ions to the resistance change layer in response to an applied voltage, the resistance change layer comprises:
a first layer in contact with the high permittivity layer; anda second layer between the second electrode and the first layer, the second layer having a higher mobility of metal ions than the first layer and a higher dielectric constant than the first layer, and the first layer includes at least one of silicon oxide and silicon nitride, and the second layer includes amorphous silicon.