| 发明名称 |
Photomask and method for manufacturing the same |
| 摘要 |
The present invention provides a photo-mask and a method for manufacturing the same. The method for manufacturing the photo-mask comprising: forming a shading pattern layer on a substrate; forming a protecting layer covering the shading pattern layer and the substrate; and; forming a reduced reflection layer on the protecting layer, wherein a refractive index of the protecting layer is greater than a refractive index of the reduced reflection layer. The present invention can mitigate a light reflection problem of a substrate of the conventional photo-mask. |
| 申请公布号 |
US8822105(B2) |
申请公布日期 |
2014.09.02 |
| 申请号 |
US201213636699 |
申请日期 |
2012.06.08 |
| 申请人 |
Shenzhen China Star Optoelectronics Technology Co. Ltd. |
发明人 |
Ye Dong;Xu Liang |
| 分类号 |
G03F1/24 |
主分类号 |
G03F1/24 |
| 代理机构 |
|
代理人 |
Friedman Mark M. |
| 主权项 |
1. A photo-mask, comprising:
a substrate; a shading pattern layer formed on the substrate; a protecting layer covering the shading pattern layer and the substrate; and a reduced reflection layer formed on the protecting layer, and a refractive index of the protecting layer is greater than a refractive index of the reduced reflection layer, and the reduced reflection layer is made of silica, silicon nitride or an organic photo-resist material, and a thickness (d) of the reduced reflection layer satisfies the below equation:
nd=λ/4; wherein n indicates the refractive index of the reduced reflection layer, and λ indicates a wavelength of light rays passing through the substrate. |
| 地址 |
Shenzhen CN |
