Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device

摘要

A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN≧−0.00526CMo2−0.640CMo=26.624.

主权项

1. A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light, comprising:
a transparent substrate; and a light-shielding film formed on the transparent substrate where the light-shielding film is to be formed into a transfer pattern; wherein the light-shielding film has at least two-layers comprising a lower layer and an upper layer from a transparent substrate side, the lower layer is composed mainly of a first material containing a transition metal, silicon, and nitrogen, the upper layer is composed mainly of a second material containing a transition metal, silicon, and nitrogen, and a ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion, wherein a ratio obtained by dividing a content of the transition metal in the lower layer by a total content of the transition metal and the silicon in the lower layer and a nitrogen content in the lower layer are in ranges satisfying a first condition of the following formula
CN≧−0.00526CMo2−0.640CMo+26.624 where CMo is a ratio obtained by dividing the content of the transition metal in the lower layer by the total content of the transition metal and the silicon in the lower layer, and where CN is a nitrogen content in the lower layer.