发明名称 MEMORY SYSTEM AND READING METHOD THEREOF
摘要 According to the present invention, a method for reading a non-volatile memory device comprise steps of receiving input of a read order; analyzing whether an operation mode is a consecutive read mode or not; authorizing pre-pulse having a pre-determined level during a pre-determined period of time in which non-selective string select lines are determined among the string select lines; and reading data of a memory cell of a selected string select line among multiple string select lines by authorizing read voltage to the selected string select line among the string select lines.
申请公布号 KR20140105661(A) 申请公布日期 2014.09.02
申请号 KR20130019329 申请日期 2013.02.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWAK, DONG HUN;PARK, KI TAE;HAN JINMAN
分类号 G11C16/34;G11C16/26 主分类号 G11C16/34
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