Oxide formation in a plasma process

摘要

A method of making a semiconductor structure is provided. The method includes forming a dielectric layer using a high density plasma oxidation process. The dielectric layer is on a storage layer and the thickness of the storage layer is reduced during the high density plasma oxidation process.

主权项

1. A method comprising:
forming a dielectric layer on a storage layer by oxidation, wherein the storage layer is formed on a tunneling layer, and the thickness of the storage layer is reduced through oxidation of a portion of the storage layer during the formation of the dielectric layer; removing the dielectric layer; and measuring the thickness of the storage layer, and if the measured thickness exceeds a first thickness repeating the forming and removing of the dielectric layer to further reduce the thickness of the storage layer, and if the measured thickness is less than the first thickness forming a final dielectric layer on the storage layer, wherein the dielectric layer is formed by high density plasma (HDP) oxidation in an HDP device operated in an unbiased and unclamped (UBUC) mode.