发明名称 Single cycle data copy for two-port SRAM
摘要 A static random access memory (SRAM) includes a column of SRAM memory cells. The SRAM may include a circuit to copy a value stored in any SRAM memory cell in a column of SRAM memory cells to any SRAM memory cell in the column of SRAM memory cells in a single cycle of the SRAM.
申请公布号 US8824196(B2) 申请公布日期 2014.09.02
申请号 US201213435828 申请日期 2012.03.30
申请人 International Business Machines Corporation 发明人 Behrends Derick G.;Christensen Todd A.;Hebig Travis R.;Launsbach Michael;Nelson Daniel M.
分类号 G11C11/00;G06F17/50 主分类号 G11C11/00
代理机构 代理人 Wilhelm Richard A.;Williams Robert R.
主权项 1. A static random access memory (SRAM) comprising: a column of SRAM memory cells having a global bit line to receive data from a SRAM memory cell of the column and a plurality of local cell groups, each local cell group having a copy bit line circuit, a local read bit line, and a local bit line to store data in a SRAM memory cell of the local cell group, the copy bit line circuit having an input coupled with the global bit line and an output coupled with the local bit line,the local read bit line coupled with the global bit line; wherein a value stored in any SRAM memory cell of a first local cell group is copied to any SRAM memory cell of a second local cell group in a single cycle of the SRAM via a local read bit line of the first local cell group, the global bit line, and a copy bit line circuit and a local bit line of the second local cell group.
地址 Armonk NY US