发明名称 Contact pads with sidewall spacers and method of making contact pads with sidewall spacers
摘要 A chip contact pad and a method of making a chip contact pad are disclosed. An embodiment of the present invention includes forming a plurality of contact pads over a workpiece, each contact pad having lower sidewalls and upper sidewalls and reducing a lower width of each contact pad so that an upper width of each contact pad is larger than the lower width. The method further includes forming a photoresist over the plurality of contact pads and removing portions of the photoresist thereby forming sidewall spacers along the lower sidewalls.
申请公布号 US8822327(B2) 申请公布日期 2014.09.02
申请号 US201213587809 申请日期 2012.08.16
申请人 Infineon Technologies AG 发明人 Gatterbauer Johann;Weidgans Bernhard
分类号 H01L21/4763 主分类号 H01L21/4763
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method of making a semiconductor device, the method comprising: forming a plurality of contact pads over a workpiece, each contact pad having lower sidewalls and upper sidewalls; reducing a lower width of each contact pad so that an upper width of each contact pad is larger than the lower width; forming a photoresist over the plurality of contact pads; and removing portions of the photoresist thereby forming sidewall spacers along the lower sidewalls wherein forming the plurality of contact pads comprises forming a copper layer or copper alloy layer lower portion and then forming a metallic material layer stack upper portion, wherein the metallic material layer stack comprises nickel (Ni), and wherein forming the photoresist comprises forming a positive photoresist.
地址 Neubiberg DE