发明名称 |
Contact pads with sidewall spacers and method of making contact pads with sidewall spacers |
摘要 |
A chip contact pad and a method of making a chip contact pad are disclosed. An embodiment of the present invention includes forming a plurality of contact pads over a workpiece, each contact pad having lower sidewalls and upper sidewalls and reducing a lower width of each contact pad so that an upper width of each contact pad is larger than the lower width. The method further includes forming a photoresist over the plurality of contact pads and removing portions of the photoresist thereby forming sidewall spacers along the lower sidewalls. |
申请公布号 |
US8822327(B2) |
申请公布日期 |
2014.09.02 |
申请号 |
US201213587809 |
申请日期 |
2012.08.16 |
申请人 |
Infineon Technologies AG |
发明人 |
Gatterbauer Johann;Weidgans Bernhard |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method of making a semiconductor device, the method comprising:
forming a plurality of contact pads over a workpiece, each contact pad having lower sidewalls and upper sidewalls; reducing a lower width of each contact pad so that an upper width of each contact pad is larger than the lower width; forming a photoresist over the plurality of contact pads; and removing portions of the photoresist thereby forming sidewall spacers along the lower sidewalls wherein forming the plurality of contact pads comprises forming a copper layer or copper alloy layer lower portion and then forming a metallic material layer stack upper portion, wherein the metallic material layer stack comprises nickel (Ni), and wherein forming the photoresist comprises forming a positive photoresist. |
地址 |
Neubiberg DE |