Semiconductor device, manufacturing method thereof, and measuring method thereof

摘要

To provide a semiconductor device capable of being easily subjected to a physical test without deteriorating characteristics. According to a measuring method of a semiconductor device in which an element layer provided with a test element including a terminal portion is sealed with first and second films having flexibility, the first film formed over the terminal portion is removed to form a contact hole reaching the terminal portion; the contact hole is filled with a resin containing a conductive material; heating is carried out after arranging a wiring substrate having flexibility over the resin with which filling has been performed so that the terminal portion and the wiring substrate having flexibility are electrically connected via the resin containing a conductive material; and a measurement is performed.

主权项

1. A manufacturing method of a semiconductor device, comprising the steps of:
forming a peeling layer over a substrate; forming an element layer provided with a test element including a terminal portion, over the peeling layer; selectively removing the peeling layer and the element layer to form an opening portion; separating the element layer from the substrate, sealing the element layer with a first film having flexibility and a second film having flexibility; removing the first film to form a contact hole reaching the terminal portion; filling the contact hole with a resin containing a conductive material; and heating after arranging a wiring substrate having flexibility over the resin with which filling has been performed so that the terminal portion and the wiring substrate having flexibility are adhered to each other through the resin containing the conductive material.