发明名称 |
Thin silicon solar cell and method of manufacture |
摘要 |
A method of fabricating a solar cell is disclosed. The method includes the steps of forming a sacrificial layer on a silicon substrate, forming a doped silicon layer atop the sacrificial substrate, forming a silicon film atop the doped silicon layer, forming a plurality of interdigitated contacts on the silicon film, contacting each of the plurality of interdigitated contacts with a metal contact, and removing the sacrificial layer. |
申请公布号 |
US8822257(B2) |
申请公布日期 |
2014.09.02 |
申请号 |
US201313920980 |
申请日期 |
2013.06.18 |
申请人 |
SunPower Corporation |
发明人 |
Rim Seung Bum;Morse Michael;Kim Taeseok;Cudzinovic Michael J. |
分类号 |
H01L21/00;H01L31/18;H01L21/02;H01L31/068;H01L31/0264 |
主分类号 |
H01L21/00 |
代理机构 |
Okamoto & Benedicto LLP |
代理人 |
Okamoto & Benedicto LLP |
主权项 |
1. A method, comprising:
epitaxially depositing a sacrificial layer on a silicon substrate; forming a doped silicon layer on the sacrificial layer; forming a silicon film on the doped silicon layer; forming an insulating layer on the silicon film; forming alternating P-type and N-type doped regions in the silicon film, wherein the alternating P-type and N-type doped regions include at least one P-type doped region and at least one N-type doped region; contacting the P-type and N-type doped regions with a metal contact; and removing the sacrificial layer. |
地址 |
San Jose CA US |