发明名称 Thin silicon solar cell and method of manufacture
摘要 A method of fabricating a solar cell is disclosed. The method includes the steps of forming a sacrificial layer on a silicon substrate, forming a doped silicon layer atop the sacrificial substrate, forming a silicon film atop the doped silicon layer, forming a plurality of interdigitated contacts on the silicon film, contacting each of the plurality of interdigitated contacts with a metal contact, and removing the sacrificial layer.
申请公布号 US8822257(B2) 申请公布日期 2014.09.02
申请号 US201313920980 申请日期 2013.06.18
申请人 SunPower Corporation 发明人 Rim Seung Bum;Morse Michael;Kim Taeseok;Cudzinovic Michael J.
分类号 H01L21/00;H01L31/18;H01L21/02;H01L31/068;H01L31/0264 主分类号 H01L21/00
代理机构 Okamoto & Benedicto LLP 代理人 Okamoto & Benedicto LLP
主权项 1. A method, comprising: epitaxially depositing a sacrificial layer on a silicon substrate; forming a doped silicon layer on the sacrificial layer; forming a silicon film on the doped silicon layer; forming an insulating layer on the silicon film; forming alternating P-type and N-type doped regions in the silicon film, wherein the alternating P-type and N-type doped regions include at least one P-type doped region and at least one N-type doped region; contacting the P-type and N-type doped regions with a metal contact; and removing the sacrificial layer.
地址 San Jose CA US