发明名称 High temperature thermal annealing process
摘要 A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under a gaseous atmosphere for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.
申请公布号 US8821739(B2) 申请公布日期 2014.09.02
申请号 US201213547246 申请日期 2012.07.12
申请人 Rohm and Haas Electronic Materials LLC;Dow Global Technologies LLC 发明人 Gu Xinyu;Chang Shih-Wei;Hustad Phillip D.;Weinhold Jeffrey D.;Trefonas Peter
分类号 B44C1/22;B05D3/02;B81C1/00;B82Y40/00;C09D183/00;C23C18/00 主分类号 B44C1/22
代理机构 代理人 Deibert Thomas S.
主权项 1. A method for processing a substrate, comprising: providing a substrate having a surface; providing a copolymer composition, comprising: a poly(styrene)-b-poly(siloxane) block copolymer component, wherein the number average molecular weight of the poly(styrene)-b-poly(siloxane) block copolymer component is 5 to 1,000 kg/mol; and,an antioxidant; applying a film of the copolymer composition to the surface of the substrate; optionally, baking the film; annealing the film by heating the film at 275 to 350° C. under a gaseous atmosphere for a period of 1 second to 4 hours; and, treating the annealed film to remove the poly(styrene) block from the annealed film and to convert the poly(siloxane) block in the annealed film to SiOx.
地址 Marlborough MA US