发明名称 |
Thermal annealing process |
摘要 |
A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; annealing the film in a gaseous atmosphere containing ≧20 wt % oxygen; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx. |
申请公布号 |
US8821738(B2) |
申请公布日期 |
2014.09.02 |
申请号 |
US201213547230 |
申请日期 |
2012.07.12 |
申请人 |
Rohm and Haas Electronic Materials LLC;Dow Global Technologies LLC |
发明人 |
Hustad Phillip D.;Gu Xinyu;Chang Shih-Wei;Weinhold Jeffrey D.;Trefonas Peter |
分类号 |
B44C1/22;B05D3/02;B81C1/00;B82Y40/00;C09D183/00;C23C18/00 |
主分类号 |
B44C1/22 |
代理机构 |
|
代理人 |
Deibert Thomas S. |
主权项 |
1. A method for processing a substrate, comprising:
providing a substrate having a surface; providing a copolymer composition, comprising:
a poly(styrene)-b-poly(siloxane) block copolymer component, wherein the number average molecular weight of the poly(styrene)-b-poly(siloxane) block copolymer component is 5 to 1,000 kg/mol; and,an antioxidant, wherein the copolymer composition contains >2 wt % (based on weight of block copolymer component) antioxidant; applying a film of the copolymer composition to the surface of the substrate; optionally, baking the film; annealing the film by heating the film at 240 to 350° C. under a gaseous atmosphere containing ≧20 wt % O2 for a period of 1 second to 4 hours; and, treating the annealed film to remove the poly(styrene) block from the annealed film and to convert the poly(siloxane) block in the annealed film to SiOx. |
地址 |
Marlborough MA US |