发明名称 Nozzle unit, and apparatus and method for treating substrate with the same
摘要 Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a process chamber, a support unit disposed within the process chamber to support a substrate, and a nozzle unit disposed within the process chamber to spray gas. The nozzle unit includes a first nozzle spraying process gas, and a second nozzle spraying blocking gas onto an inner wall of the process chamber or an area adjacent to the support unit to prevent the process gas from being deposited on the inner wall of the process chamber or the support unit.
申请公布号 US8821641(B2) 申请公布日期 2014.09.02
申请号 US201213606774 申请日期 2012.09.07
申请人 Samsung Electronics Co., Ltd. 发明人 Lee Sang Gon;Park Hyeong Soo
分类号 B05B1/28;C23C16/455;C23C16/458;H01L21/687 主分类号 B05B1/28
代理机构 Harness, Dickey & Pierce 代理人 Harness, Dickey & Pierce
主权项 1. A substrate treatment apparatus, comprising: a process chamber; a support unit disposed within the process chamber to support a substrate; and a nozzle unit disposed within the process chamber to spray gas, the nozzle unit including, a first nozzle spraying process gas, a second nozzle spraying blocking gas onto an inner wall of the process chamber or an area adjacent to the support unit to prevent the process gas from being deposited on the inner wall of the process chamber or the support unit, at least one inner tube in which the processing gas is introduced, and an outer tube through which a cooling fluid for cooling the process gas within the at least one inner tube flows, the outer tube along sidewalls and a bottom surface of the at least one inner tube; wherein the first nozzle sprays the process as in a horizontal direction, and the second nozzle is disposed in at least one of upper and lower portions of the nozzle unit to spray the blocking as in a direction parallel to that of the process gas.
地址 Gyeonggi-do KR