Hot electron injection nanocrystals MOS transistor

摘要

The disclosure relates to a hot electron injection MOS transistor, comprising source and drain regions formed in a semiconductor substrate, a control gate, and a floating gate comprising electrically conductive nanoparticles. The control gate comprises a first portion arranged at a first distance from the substrate, a second portion arranged at a second distance less than the first distance from the substrate, and an intermediary portion linking the first and the second portions.

主权项

1. A hot electron injection MOS transistor, comprising:
source and drain regions formed in a semiconductor substrate; a control gate; and a floating gate that includes electrically conductive nanoparticles configured to accumulate electrical charges, the floating gated being arranged between the control gate and the substrate, wherein the control gate comprises:
a first portion arranged closer to the source region than to the drain region and at a first distance from the substrate;a second portion arranged closer to the drain region than to the source region, directly above a hot electron injection zone, and at a second distance, less than the first distance, from the substrate; andan intermediary portion linking the first and the second portions.