Stack semiconductor apparatus having a through silicon via and method of fabricating the same

摘要

In a semiconductor apparatus, a plurality of semiconductor chips including through-silicon vias are stacked in a vertical direction, wherein the through-silicon via formed in each semiconductor chip protrudes beyond heights of each semiconductor chip.

主权项

1. A semiconductor apparatus comprises:
a plurality of semiconductor chips stacked in a vertical direction and including through-silicon vias; and a conductive connection member formed in order to electrically couple the plurality of semiconductor chips, wherein each semiconductor chip comprises:
a substrate formed through the through-silicon via and including a first surface and a second surface;an insulating layer formed on the first surface of the substrate; anda bump formed in the insulating layer and including a first surface contacted to the conductive connection member and a second surface contacted to the through-silicon via, wherein a width of the first surface of the bump is wider than that of the second surface, and wherein the through-silicon via is configured to be protruded from the second surface of the substrate and the conductive connection member is formed to surround a protruding portion of the through-silicon via.