Diode with epitaxially grown semiconductor layers

摘要

A semiconductor device includes a first-conductivity-type semiconductor substrate; a first-conductivity-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductivity-type second semiconductor layer epitaxially formed on the first semiconductor layer; a second-conductivity-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer; a recess formed in the third semiconductor layer, at least a corner portion of a side face and a bottom surface of the recess being located in the second semiconductor layer; a first electrode in contact with the third semiconductor layer; a second electrode connected to the first electrode and in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode in contact with a lower surface of the semiconductor substrate.

主权项

1. A semiconductor device comprising:
a first-conductivity-type semiconductor substrate; a first-conductivity-type first semiconductor layer formed on one surface of the semiconductor substrate, the first semiconductor layer having an impurity concentration lower than that of the semiconductor substrate; a second-conductivity-type second semiconductor layer formed epitaxially on the first semiconductor layer; a second-conductivity-type third semiconductor layer formed epitaxially on the second semiconductor layer, the third semiconductor layer having an impurity concentration higher than that of the second semiconductor layer; a recess formed in the third semiconductor layer and the second semiconductor layer, a corner portion of a side face and a bottom surface of the recess being located in the second semiconductor layer; a first electrode being in contact with the third semiconductor layer; a second electrode connected to the first electrode while being in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode being in contact with the other surface of the semiconductor substrate; wherein a high-resistance region having resistance higher than that of the first semiconductor layer is provided in the second semiconductor layer including the corner portion.