发明名称 Ion beam sputter target and method of manufacture
摘要 A target for use in an ion beam sputtering apparatus made of at least two target tiles where at least two of the target tiles are made of different chemical compositions and are mounted on a main tile and geometrically arranged on the main tile to yield a desired chemical composition on a sputtered substrate. In an alternate embodiment, the tiles are of varied thickness according to the desired chemical properties of the sputtered film. In yet another alternate embodiment, the target is comprised of plugs pressed in a green state which are disposed in cavities formed in a main tile also formed in a green state and the assembly can then be compacted and then sintered.
申请公布号 US8821701(B2) 申请公布日期 2014.09.02
申请号 US201012792324 申请日期 2010.06.02
申请人 发明人 Higdon Clifton;Elmoursi Alaa A.;Goldsmith Jason;Cook Bruce;Blau Peter;Jun Qu;Milner Robert
分类号 C23C14/00;C25B9/00;C25B11/00;C25B13/00 主分类号 C23C14/00
代理机构 Rader, Fishman & Grauer PLLC 代理人 Rader, Fishman & Grauer PLLC
主权项 1. A target for a Physical Vapor Deposition process comprising: a first target tile made of a first chemical composition defining a length, width, and substantially equal thickness throughout, and a second target tile made of a second chemical composition defining a length, width, and substantially equal thickness throughout, wherein said first target tile is positioned adjacent relative to at least one of the length and width of said second target tile and wherein said first target tile is thicker than said second target tile; and a backing for supporting said first target tile and said second target tile.
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