发明名称 Semiconductor device
摘要 A semiconductor device that has a simple peripheral circuit configuration, is unlikely to deteriorate due to repetitive data writing operations, and is used as a nonvolatile switch. Even when supply of a power supply voltage is stopped, data on a conduction state is held in a data retention portion connected to a thin film transistor including an oxide semiconductor layer having a channel formation region. The data retention portion is connected to a gate of a field-effect transistor in a current amplifier circuit (in which the field-effect transistor and a bipolar transistor are connected as a Darlington pair), and thus the conduction state is controlled without leaking charge in the data retention portion.
申请公布号 US8824192(B2) 申请公布日期 2014.09.02
申请号 US201213455475 申请日期 2012.04.25
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Endo Masami
分类号 G11C11/24 主分类号 G11C11/24
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A semiconductor device comprising: a transistor comprising an oxide semiconductor layer including a channel formation region; a current amplifier circuit comprising a field-effect transistor and a bipolar transistor; and a capacitor electrically connected to a gate of the field-effect transistor, wherein one of a source and a drain of the transistor is electrically connected to the gate of the field-effect transistor, wherein one of a source and a drain of the field-effect transistor is electrically connected to a base of the bipolar transistor, wherein the other of the source and the drain of the field-effect transistor is electrically connected to one of an emitter and a collector of the bipolar transistor, and wherein the current amplifier circuit is configured to control an amount of current in accordance with data held in the capacitor.
地址 Atsugi-shi, Kanagawa JP