发明名称 |
Semiconductor device |
摘要 |
A semiconductor device that has a simple peripheral circuit configuration, is unlikely to deteriorate due to repetitive data writing operations, and is used as a nonvolatile switch. Even when supply of a power supply voltage is stopped, data on a conduction state is held in a data retention portion connected to a thin film transistor including an oxide semiconductor layer having a channel formation region. The data retention portion is connected to a gate of a field-effect transistor in a current amplifier circuit (in which the field-effect transistor and a bipolar transistor are connected as a Darlington pair), and thus the conduction state is controlled without leaking charge in the data retention portion. |
申请公布号 |
US8824192(B2) |
申请公布日期 |
2014.09.02 |
申请号 |
US201213455475 |
申请日期 |
2012.04.25 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Endo Masami |
分类号 |
G11C11/24 |
主分类号 |
G11C11/24 |
代理机构 |
Robinson Intellectual Property Law Office, P.C. |
代理人 |
Robinson Eric J.;Robinson Intellectual Property Law Office, P.C. |
主权项 |
1. A semiconductor device comprising:
a transistor comprising an oxide semiconductor layer including a channel formation region; a current amplifier circuit comprising a field-effect transistor and a bipolar transistor; and a capacitor electrically connected to a gate of the field-effect transistor, wherein one of a source and a drain of the transistor is electrically connected to the gate of the field-effect transistor, wherein one of a source and a drain of the field-effect transistor is electrically connected to a base of the bipolar transistor, wherein the other of the source and the drain of the field-effect transistor is electrically connected to one of an emitter and a collector of the bipolar transistor, and wherein the current amplifier circuit is configured to control an amount of current in accordance with data held in the capacitor. |
地址 |
Atsugi-shi, Kanagawa JP |