| 发明名称 | Apparatus and method for three dimensional integrated circuits | ||
| 摘要 | A structure comprises a substrate comprising a plurality of traces on top of the substrate, a plurality of connectors formed on a top surface of a semiconductor die, wherein the semiconductor die is formed on the substrate and coupled to the substrate through the plurality of connectors and a dummy metal structure formed at a corner of a top surface of the substrate, wherein the dummy metal structure has two discontinuous sections. | ||
| 申请公布号 | US8823170(B2) | 申请公布日期 | 2014.09.02 |
| 申请号 | US201213706436 | 申请日期 | 2012.12.06 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wu Sheng-Yu;Tsai Pei-Chun;Chang Chih-Horng;Kuo Tin-Hao;Chen Chen-Shien |
| 分类号 | H01L23/48;H01L21/50;H01L23/498 | 主分类号 | H01L23/48 |
| 代理机构 | Slater and Matsil, L.L.P. | 代理人 | Slater and Matsil, L.L.P. |
| 主权项 | 1. A structure comprising: a substrate comprising a plurality of traces on a top surface of the substrate; a plurality of connectors formed on a top surface of a semiconductor die, wherein the semiconductor die is bonded on the substrate and coupled to the substrate through the plurality of connectors; and a dummy metal structure formed at a corner of the top surface of the substrate, wherein the dummy metal structure has two discontinuous sections, and wherein a first discontinuous section is located inside an edge of the semiconductor die and a second discontinuous section is located outside the edge of the semiconductor die. | ||
| 地址 | Hsin-Chu TW | ||