| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | A semiconductor device includes a first semiconductor chip including a first surface, a second surface and a first terminal arranged on the first surface, a second semiconductor chip including a first surface, a second surface and a second terminal arranged on the first surface of the second semiconductor chip, a support substrate including a first surface bonded to the second surfaces of the first semiconductor chip and the second semiconductor chip, and an isolation groove formed on the first surface of the support substrate. The isolation includes a pair of side surfaces continuously extending from opposing side surfaces of the first semiconductor chip and the second semiconductor chip, respectively, and the isolation groove is formed into the support substrate to extend from the first surface of the support substrate. The isolation groove has a depth less than a thickness of the support substrate. | ||
| 申请公布号 | US8823155(B2) | 申请公布日期 | 2014.09.02 |
| 申请号 | US201113275430 | 申请日期 | 2011.10.18 |
| 申请人 | Rohm Co., Ltd. | 发明人 | Nakasaki Toshio |
| 分类号 | H01L27/00;H01L21/76;H01L21/683;H01L21/764;H01L21/786;H01L21/762;H01L23/48;H01L21/768;H01L25/18;H01L21/304;H01L23/00 | 主分类号 | H01L27/00 |
| 代理机构 | Hamre, Schumann, Mueller & Larson, P.C. | 代理人 | Hamre, Schumann, Mueller & Larson, P.C. |
| 主权项 | 1. A semiconductor device, comprising: a first semiconductor chip including a first surface, a second surface, and a first terminal of the first semiconductor chip arranged on the first surface of the first semiconductor chip; a second semiconductor chip including a first surface, a second surface, and a first terminal of the second semiconductor chip arranged on the first surface of the second semiconductor chip; a support substrate including a first surface, the first surface of the support substrate bonded to the second surfaces of the first semiconductor chip and the second semiconductor chip; and an isolation groove formed on the first surface of the support substrate, wherein the isolation groove includes a pair of side surfaces continuously extending from opposing side surfaces of the first semiconductor chip and the second semiconductor chip, respectively, and the isolation groove is formed into the support substrate to extend from the first surface of the support substrate, the isolation groove having a depth less than a thickness of the support substrate, and wherein a first electrode and a control electrode are arranged on the second surface of the first semiconductor chip bonded to the first surface of the support substrate. | ||
| 地址 | Kyoto JP | ||