发明名称 Solid-state imaging device, drive method of solid-state imaging device, and imaging apparatus
摘要 A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to optoelectronic conversion and stores therein a signal charge, a transfer transistor that transfers the signal charge stored in the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and voltage setting means for setting a voltage of a well of the charge-voltage conversion section to be negative.
申请公布号 US8823069(B2) 申请公布日期 2014.09.02
申请号 US201213481569 申请日期 2012.05.25
申请人 Sony Corporation 发明人 Koga Fumihiko
分类号 H01L31/062 主分类号 H01L31/062
代理机构 The Chicago Technology Law Group, LLC 代理人 Depke Robert J.;The Chicago Technology Law Group, LLC
主权项 1. A solid-state imaging device comprising: a pixel section including an array of a plurality of unit pixels each unit pixel being formed at one or more well regions on a substrate, each unit pixel having one or more photodiode regions, a first transistor which reads charge to a node and second transistor which resets the node; wherein a well voltage control circuit applies a first voltage and a second voltage to the well region, the second voltage being different from the first voltage, the voltage control circuit applying the second voltage when the second transistor resets the node.
地址 Tokyo JP