发明名称 |
Solid-state imaging device, drive method of solid-state imaging device, and imaging apparatus |
摘要 |
A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to optoelectronic conversion and stores therein a signal charge, a transfer transistor that transfers the signal charge stored in the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and voltage setting means for setting a voltage of a well of the charge-voltage conversion section to be negative. |
申请公布号 |
US8823069(B2) |
申请公布日期 |
2014.09.02 |
申请号 |
US201213481569 |
申请日期 |
2012.05.25 |
申请人 |
Sony Corporation |
发明人 |
Koga Fumihiko |
分类号 |
H01L31/062 |
主分类号 |
H01L31/062 |
代理机构 |
The Chicago Technology Law Group, LLC |
代理人 |
Depke Robert J.;The Chicago Technology Law Group, LLC |
主权项 |
1. A solid-state imaging device comprising:
a pixel section including an array of a plurality of unit pixels each unit pixel being formed at one or more well regions on a substrate, each unit pixel having one or more photodiode regions, a first transistor which reads charge to a node and second transistor which resets the node; wherein a well voltage control circuit applies a first voltage and a second voltage to the well region, the second voltage being different from the first voltage, the voltage control circuit applying the second voltage when the second transistor resets the node. |
地址 |
Tokyo JP |