Self-aligned insulated film for high-k metal gate device

摘要

A method of making an integrated circuit includes providing a semiconductor substrate and forming a gate dielectric over the substrate, such as a high-k dielectric. A metal gate structure is formed over the semiconductor substrate and the gate dielectric and a thin dielectric film is formed over that. The thin dielectric film includes oxynitride combined with metal from the metal gate. The method further includes providing an interlayer dielectric (ILD) on either side of the metal gate structure.

主权项

1. A method of making an integrated circuit, the method comprising:
providing a semiconductor substrate; forming a gate dielectric over the substrate; forming a metal gate structure over the semiconductor substrate and the gate dielectric; forming a thin dielectric film on the metal gate structure, the thin dielectric film comprising oxynitride; performing a plasma bombardment process on the oxynitride that causes the oxynitride to react with metal from the metal gate structure and form a metal oxynitride; and providing an interlayer dielectric (ILD) on either side of the metal gate structure.