Method of fabricating a GaN P-i-N diode using implantation

摘要

A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region.

主权项

1. A method for fabricating a III-nitride semiconductor device, the method comprising:
providing a III-nitride substrate of a first conductivity type and characterized by a first dopant concentration; forming a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, wherein the first III-nitride epitaxial layer is characterized by a second dopant concentration less than the first dopant concentration; forming a second III-nitride epitaxial layer of a second conductivity type coupled to the first III-nitride epitaxial layer; removing a portion of the second III-nitride epitaxial layer to expose a portion of the first III-nitride epitaxial layer; implanting ions into an implanted region of the exposed portion of the first III-nitride epitaxial layer, the exposed portion of the first III-nitride epitaxial layer adjacent to a remaining portion of the second III-nitride epitaxial layer; forming a first metal structure coupled to the remaining portion of the second III-nitride epitaxial layer; and forming a second metal structure coupled to the III-nitride substrate; wherein a charge density in the implanted region is substantially lower than a charge density in the first III-nitride epitaxial layer.