Heterogeneous integration process incorporating layer transfer in epitaxy level packaging

摘要

Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.

主权项

1. A method of forming an epitaxial structure comprising:
implanting an ion species suitable for exfoliation into a crystalline substrate to form an ion implanted exfoliation layer in said crystalline substrate; bonding a handling substrate to said ion implanted exfoliation layer; separating said handling substrate and ion implanted exfoliation layer from said crystalline substrate; mounting an assembly substrate over said ion implanted exfoliation layer; wherein said assembly substrate includes a number of apertures extending therethrough forming an assembly pattern; growing an epitaxial material within said assembly pattern to form an epitaxial pattern over said ion implanted and recrystallized exfoliation layer.