| 摘要 |
Disclosed is a photovoltaic element which can be grown at low temperatures, can be grown on an inexpensive large-area silicon wafer, and has excellent light emitting property. The photovoltaic element includes a first photoelectric transformation unit and a second photoelectric transformation unit. The second photoelectric transformation unit is placed on top of the first photoelectric transformation unit, and includes I-VII group semiconductor layers with a larger band gap than the first I-VII photoelectric transformation unit. Here, the second photoelectric transformation unit includes: an N-type I-VII group semiconductor layer; a I-VII group quantum-well layer; and a P-type I-VII group semiconductor layer. The N-type I-VII group semiconductor layer is placed on top of the first photoelectric transformation unit and includes CuCl_xBr_yI_(1-x-y) (0.5<x<=1, 0<=y<0.5). The I-VII group quantum-well layer is placed on top of the N-type I-VII group semiconductor layer and includes CuCl_aBr_bI_(1-a-b) (0<=a<0.5, 0.5<b<=1). The P-type I-VII group semiconductor layer is placed on top of the I-VII group quantum-well layer and includes CuCl_xBr_yI_(1-x-y) (0.5<x<=1, 0<=y<0.5). |
