Power source circuit and semiconductor memory circuit using the same

摘要

A semiconductor memory circuit includes: a plurality of memory regions; a plurality of driving units configured to be enabled in response to a plurality of enable signals, respectively, and generate a predetermined voltage used for operations of the plurality of memory regions; and an enable control unit configured to count a control pulse and activate one or more enable signals among the plurality of enable signals.

主权项

1. A power source circuit comprising:
a plurality of driving units each of which is configured to generate a power source voltage, wherein any desired positions and any desired numbers of enabled driving units and disabled driving units among the plurality of driving units can be changed by control a number of times of inputting a control pulse, wherein the plurality of driving units are configured to be enabled in response to a plurality of enable signals, respectively, and wherein each of the plurality of driving units comprises: a reference voltage generation section configured to generate a reference voltage used for generating the power source voltage; a differential amplification section configured to generate the power source voltage by using the reference voltage; and a switching section configured to enable the differential amplification section in response to any one of the plurality of enable signals.