Display device

摘要

A display device includes: a pixel array unit with pixel circuits disposed in matrix form, the pixel circuit including a driving transistor, an electro-optic element, a storage capacitor, and a sampling transistor, with the electro-optic element emitting light by generating a driving current based on information stored in the storage capacitor at the driving transistor to be applied to the electro-optic element; and a control unit, of which the output stage includes a buffer transistor, to output a pulse signal for driving the pixel array unit from the buffer transistor; wherein the pixel array unit and the control unit are formed with long laser beam irradiation to be scanned in the vertical direction or horizontal direction; and wherein with the control unit, the size of the buffer transistor is equal to or greater than the pixel pitch in the scanning direction of the laser beam.

主权项

1. A display device comprising:
a pixel array unit where pixel circuits are disposed in a matrix, said pixel circuit including:
a driving transistor configured to generate a driving current,an electro-optic element connected to an output terminal side of aid driving transistor,a storage capacitor for storing a signal corresponding to a signal potential within a picture signal supplied via a picture signal line,a sampling transistor configured to write information corresponding to said signal potential in said storage capacitor, with said electro-optic element emitting light by generating the driving current based on information stored in said storage capacitor at said driving transistor to be applied to said electro-optic element; and a control unit having an output stage that includes a buffer transistor, configured to output a pulse signal for driving said pixel array unit from said buffer transistor; wherein said pixel array unit and said control unit are formed with laser beam irradiation with a predetermined wavelength scanned in the vertical direction or horizontal direction; and wherein the buffer transistor characteristics for each of a plurality of buffer transistors is dependent upon radiation received during at least four separated independent laser radiation application steps, and further wherein a plurality of the buffer transistors include a protruding portion which receives laser radiation.