发明名称 |
Micro electro mechanical system, semiconductor device, and manufacturing method thereof |
摘要 |
The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved. |
申请公布号 |
US8822251(B2) |
申请公布日期 |
2014.09.02 |
申请号 |
US200912426602 |
申请日期 |
2009.04.20 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamaguchi Mayumi;Izumi Konami;Tateishi Fuminori |
分类号 |
H01L21/00;H01L21/30;H01L21/46 |
主分类号 |
H01L21/00 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. A manufacturing method of a semiconductor device, comprising steps of:
forming a peeling layer over a first substrate; forming a sensor on the peeling layer; forming a first spacer layer over the peeling layer and around the sensor; providing a film over the first spacer layer so as to form a first interspace defined by the first spacer layer, the peeling layer , and the film, the sensor being located in the first interspace; separating the first substrate from a set including the sensor, the film, and the first spacer layer; removing the peeling layer from the sensor; and attaching the set to a second substrate including an electric circuit and a second spacer layer formed over the electric circuit so that a second interspace, defined by the second spacer layer, the sensor, and the second substrate, is formed. |
地址 |
Atsugi-shi, Kanagawa-ken JP |