发明名称 Micro electro mechanical system, semiconductor device, and manufacturing method thereof
摘要 The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.
申请公布号 US8822251(B2) 申请公布日期 2014.09.02
申请号 US200912426602 申请日期 2009.04.20
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamaguchi Mayumi;Izumi Konami;Tateishi Fuminori
分类号 H01L21/00;H01L21/30;H01L21/46 主分类号 H01L21/00
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A manufacturing method of a semiconductor device, comprising steps of: forming a peeling layer over a first substrate; forming a sensor on the peeling layer; forming a first spacer layer over the peeling layer and around the sensor; providing a film over the first spacer layer so as to form a first interspace defined by the first spacer layer, the peeling layer , and the film, the sensor being located in the first interspace; separating the first substrate from a set including the sensor, the film, and the first spacer layer; removing the peeling layer from the sensor; and attaching the set to a second substrate including an electric circuit and a second spacer layer formed over the electric circuit so that a second interspace, defined by the second spacer layer, the sensor, and the second substrate, is formed.
地址 Atsugi-shi, Kanagawa-ken JP
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